FDMS86540 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A
* Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A
* Advanced Package and Silicon combination for low rDS(on)
an.
* Primary Switch in isolated DC-DC
* Synchronous Rectifier
* Load Switch
Top
Bottom
Pin 1 S
S
D
S
S G.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charg.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 334.06KB)